2011. 8. 30 1/7 semiconductor technical data KGT12N120NDH revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features h high speed switching h high system efficiency h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ? 20 v collector current @t c =25 ? i c 24 a @t c =100 ? 12 a pulsed collector current i cm * 36 a diode continuous forward current @t c =100 ? i f 15 a diode maximum forward current i fm 45 a maximum power dissipation @t c =25 ? p d 176 w @t c =100 ? 70 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r t h jc 0.92 ? /w thermal resistance, junction to case (diode) r t h jc 2.8 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g downloaded from: http:///
2011. 8. 30 2/7 KGT12N120NDH revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1.0ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =12ma 4.5 6.0 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =12a - 2.0 2.5 v v ge =15v, i c =12a, t c = 125 ? - 2.35 - v v ge =15v, i c =24a - 2.6 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 12a - 70 100 nc gate-emitter charge q ge - 9 - nc gate-collector charge q gc - 40 - nc turn-on delay time t d(on) v cc =600v, i c =12a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note1) - 30 - ns rise time t r - 18 - ns turn-off delay time t d(off) - 100 - ns fall time t f - 135 - ns turn-on switching loss e on - 1.7 - mj turn-off switching loss e off - 0.5 - mj total switching loss e ts - 3.0 - mj turn-on delay time t d(on) v cc =600v, i c =12a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note1) - 30 - ns rise time t r - 20 - ns turn-off delay time t d(off) - 110 - ns fall time t f - 250 - ns turn-on switching loss e on - 2.0 - mj turn-off switching loss e off - 1.0 - mj total switching loss e ts - 3.5 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 1100 - pf ouput capacitance c oes - 50 - pf reverse transfer capacitance c res - 30 - pf marking note 1 : energy loss include tail current and diode reverse recovery. downloaded from: http:///
2011. 8. 30 3/7 KGT12N120NDH revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 12a t c =25 ? - 1.9 2.5 v t c =125 ? - 2.1 - diode reverse recovery time t rr i f = 12a di/dt = -200a/ s t c =25 ? - 280 - ns t c =125 ? - 370 - diode peak reverse recovery current i rr t c =25 ? - 15 23 a t c =125 ? - 16 - diode reverse recovery charge q rr t c =25 ? - 1900 3700 nc t c =125 ? - 2800 - downloaded from: http:///
2011. 8. 30 4/7 KGT12N120NDH revision no : 0 downloaded from: http:///
2011. 8. 30 5/7 KGT12N120NDH revision no : 0 downloaded from: http:///
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